A new low-resistance MOSFET reduces heat loss and space usage, making it ideal for smartphones and other fast-charging compact electronic devices.
Rohm has introduced a new ultra-compact power MOSFET design for faster charging of electronic devices. The AW2K21 design meets space-saving solutions with reduced ON-resistance, making it ideal for smartphones, wearables, tablets, and similar high-current applications.
Fast charging requires robust protection and efficient current handling. Traditional designs typically involve two large MOSFETs to manage bidirectional protection and minimise power loss. However, this approach increases both board space and design complexity.
This new chip integrates two MOSFETs into a single compact 2.0 mm × 2.0 mm moulded package. It supports bidirectional current control and offers an industry-leading ON-resistance of just 2.0 mΩ (typical), along with a maximum current rating of 20 A and voltage tolerance up to 30 V.
It adds to an increase in power density by increasing the number of active cells per unit area, by adding a drain terminal on the top surface, enabling wafer-level chip scale packaging (WLCSP).
The AW2K21 data sheet offers these recommendations for using the device in a circuit:
- It is recommended to connect a capacitor of 4.7 uF or more as close as possible to both input and output of this product.
- It is needed to connect a TVS (Transient Voltage Suppressor) as a protective element against surges that exceed the absolute maximum rated voltage.
- This product might cause chip aging and breakdown under the large electrified environment. Please consider designing an ESD protection circuit.
Compared to conventional solutions using two 3.3 mm × 3.3 mm MOSFETs, the AW2K21 cuts the footprint by over 80% and ON-resistance by about 33%. It supports multiple use cases, including USB VBUS protection, battery protection, and load switching, where both compact size and reliable performance are essential.