Engineered for next-gen AI servers, telecom systems, and solar inverters, the latest silicon carbide Schottky diodes offer ultra-low power loss, rugged surge protection, and thermal stability up to 175 °C.
Powering up its wide-bandgap semiconductor portfolio, Nexperia has launched two new 1200 V, 20 A silicon carbide (SiC) Schottky diodes tailored for energy-intensive applications. Designed for systems where efficiency and thermal resilience are non-negotiable, the PSC20120J and PSC20120L are optimized for high-efficiency power conversion in AI server power supply units (PSUs), telecom infrastructure, and solar inverter setups.
These latest diodes leverage SiC technology’s inherent advantages to deliver superior switching performance—virtually immune to temperature, current, or speed variations. Featuring zero reverse recovery and temperature-independent capacitive switching, both devices offer a class-leading figure-of-merit (Qc × VF), directly translating to reduced power loss and improved system-level efficiency.The key features are:
Key Features:
- Fast, smooth switching performance
- High surge current capability (IFSM)
- Low leakage current
- Easy paralleling with positive temperature coefficient
Under the hood, both models incorporate a merged PiN Schottky (MPS) structure, which brings excellent surge current handling (high IFSM) to the table. That means fewer external protection circuits are needed, letting design engineers cut down on complexity while still hitting tough performance targets in compact, rugged high-voltage systems.
The two devices are differentiated by packaging: the PSC20120J comes in a surface-mount Real-2-Pin D2PAK R2P (TO-263-2) for space-constrained layouts, while the PSC20120L features a Real-2-Pin TO247 R2P (TO-247-2) through-hole package for high-power designs. Both packages are engineered for thermal reliability, supporting operation at junction temperatures up to 175 °C.
With these additions, Nexperia continues to expand its SiC power lineup, offering components that meet the performance, reliability, and volume manufacturing needs of industrial-scale applications. Backed by Nexperia’s proven supply chain and quality focus, these diodes are a robust choice for engineers targeting next-gen power electronics.
These new 1200 V silicon carbide Schottky diodes are ideally suited for high-efficiency power conversion in demanding applications such as AI server farm power supply units (PSUs), where consistent performance and thermal reliability are critical. They also meet the stringent requirements of telecom power systems, ensuring stable operation under fluctuating loads. Additionally, their ability to handle high voltages and harsh conditions makes them a strong fit for renewable energy infrastructure, particularly in solar inverter applications where power density and efficiency are paramount.
For more information, click here.
